JPH023540B2 - - Google Patents
Info
- Publication number
- JPH023540B2 JPH023540B2 JP55143357A JP14335780A JPH023540B2 JP H023540 B2 JPH023540 B2 JP H023540B2 JP 55143357 A JP55143357 A JP 55143357A JP 14335780 A JP14335780 A JP 14335780A JP H023540 B2 JPH023540 B2 JP H023540B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- gate
- layer
- semiconductor layer
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55143357A JPS5768073A (en) | 1980-10-14 | 1980-10-14 | Field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55143357A JPS5768073A (en) | 1980-10-14 | 1980-10-14 | Field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5768073A JPS5768073A (en) | 1982-04-26 |
JPH023540B2 true JPH023540B2 (en]) | 1990-01-24 |
Family
ID=15336897
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55143357A Granted JPS5768073A (en) | 1980-10-14 | 1980-10-14 | Field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5768073A (en]) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0596851U (ja) * | 1992-06-04 | 1993-12-27 | コニカ株式会社 | 110サイズ用ネガキャリアアダプター |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5844770A (ja) * | 1981-09-10 | 1983-03-15 | Fujitsu Ltd | 半導体装置 |
JPS59172777A (ja) * | 1983-03-23 | 1984-09-29 | Oki Electric Ind Co Ltd | 半導体装置 |
JPS6037784A (ja) * | 1983-08-10 | 1985-02-27 | Matsushita Electric Ind Co Ltd | 電界効果型トランジスタ |
JPS62115781A (ja) * | 1985-11-15 | 1987-05-27 | Hitachi Ltd | 電界効果トランジスタ |
JP2679396B2 (ja) * | 1990-10-25 | 1997-11-19 | 日本電気株式会社 | 電界効果トランジスタ |
JP2978972B2 (ja) * | 1992-03-12 | 1999-11-15 | 富士通株式会社 | 半導体装置の製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5161265A (en) * | 1974-11-25 | 1976-05-27 | Handotai Kenkyu Shinkokai | 335 zokukagobutsuhandotaisoshi |
JPS6040716B2 (ja) * | 1977-03-09 | 1985-09-12 | 松下電器産業株式会社 | 化合物半導体装置およびその製造方法 |
-
1980
- 1980-10-14 JP JP55143357A patent/JPS5768073A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0596851U (ja) * | 1992-06-04 | 1993-12-27 | コニカ株式会社 | 110サイズ用ネガキャリアアダプター |
Also Published As
Publication number | Publication date |
---|---|
JPS5768073A (en) | 1982-04-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3499884B2 (ja) | 高電力、高周波金属−半導体電界効果トランジスタ | |
US4641161A (en) | Heterojunction device | |
JPS6276645A (ja) | 複合半導体結晶体構造 | |
JPH0371776B2 (en]) | ||
EP0334006A1 (en) | Stacked channel heterojunction fet | |
EP0184827A2 (en) | A high speed and high power transistor | |
JPH0624208B2 (ja) | 半導体装置 | |
JPH023540B2 (en]) | ||
EP0029481A1 (en) | Field effect semiconductor structure | |
US5227644A (en) | Heterojunction field effect transistor with improve carrier density and mobility | |
US5670804A (en) | PN-junction gate FET | |
JPH05343686A (ja) | 半導体装置およびその製造方法 | |
US5945695A (en) | Semiconductor device with InGaP channel layer | |
JP2553673B2 (ja) | 電界効果トランジスタ | |
JPH0289324A (ja) | 変調ドープ電界効果トランジスタ | |
JP2578745B2 (ja) | 電界効果トランジスタ | |
JPH0328821B2 (en]) | ||
JPH0715018A (ja) | 電界効果トランジスタ | |
JPS63144580A (ja) | 電界効果トランジスタ | |
JP2680821B2 (ja) | ヘテロ構造電界効果トランジスタ | |
JPH0219623B2 (en]) | ||
JPH02130934A (ja) | ショットキー接合電界効果トランジスタ | |
JPS6068661A (ja) | 半導体装置 | |
JPS6159676B2 (en]) | ||
KR930009811B1 (ko) | 금속-반도체 전계효과 트랜지스터 및 그 제조방법 |